UltimateGaN
New semiconductors using gallium nitride technology
Participants
- Infineon Technologies Ag [AT]
- Fronius International Gmbh
- Ctr Carinthian Tech Research Ag
- Technische Universität Graz
- At & S Austria Technologie & Systemtechnik Aktiengesellschaft
- Interuniversitair Micro-Electronica Centrum
- Aixtron Se
- Infineon Technologies Ag [De]
- Siltronic Ag
- Max Planck Institut Fur Eisenforschung Gmbh
- Fraunhofer Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.
- Technische Universitaet Chemnitz
- Namlab Ggmbh
- Universita Degli Studi Di Padova
- Infineon Technologies Italia SRL
- Universita' Degli Studi Di Milano-Bicocca
- Eltek As
- Slovenska Technicka Univerzita V Bratislave
- Nano Design Sro
- Ecole Polytechnique Federale De Lausanne
- Attolight Sa
- Ikerlan, S. Coop.
- For Optimal Renewable Energy Systems SL
- Lear Corporation Holding Spain SL
- Rise Research Institutes of Sweden Ab
- Swegan Ab
Duration
2019-2022
Budget
48 438 216 €
Programme
European programmes: H2020 - ECSEL
The ULTIMATEGaN project aims to develop new semiconductors using gallium nitride technology to make the European industrial sector a global benchmark in next-generation gallium nitride technology.
The new project will also make possible the new emerging 5G-RF market and high-performance power applications developed in Europe, providing state-of-the-art technology through collaboration channels for research and innovation.
our contribution
IKERLAN’s contribution, with the involvement of the Power Electronics area, will be as follows:
- Development of a wireless charger for electric or hybrid cars, based on the GaN semiconductor samples developed in the project.
- Study and assessment of the benefits of gallium nitride for vehicle charger application.
- Validation of electro-thermal characteristics and reliability under real application conditions at the IKERLAN laboratory.
